近日,山西师范大学许小红教授、王芳教授与中科院化学所薛丁江研究员共同合作,报道了一种自下而上合成CrSbSe3纳米带的模板选择策略,并实现了一维(1D)铁磁CrSbSe3纳米带的可控制备,纳米带表现出典型的半导体行为和铁磁性,证实了1D CrSbSe3半导体的本征铁磁性。
随着云计算技术的兴起,数据存储的规模和复杂性达到了前所未有的高度,并对存储技术提出了越来越严格的要求。磁性半导体作为一类新的自旋电子材料,具有同步实现逻辑运算、信息处理和存储的潜力。
因此,低维磁性半导体已成为纳米级自旋电子器件构建的必然趋势,旨在使器件尺寸最小化,实现高密度集成。然而,实现这种低维磁性半导体仍然面临诸多困难,特别是对于具有更高磁晶各向异性、更大长径比和更大纳米自旋电子器件潜力的1D铁磁半导体。
CrSbSe3作为唯一一种经过实验验证同时具有铁磁和半导体特性的1D材料,在探究其特性和应用方面具有重要意义。然而,到目前为止,CrSbSe3纳米晶体仅能通过自上而下的剥离方法获得。
基于此,该团队报道了一种自下而上的溶液法用于合成CrSbSe3纳米带。他们通过对比潜在的二元模板和三元目标产物的形成能,选择了具有1D晶体结构的Sb2Se3作为模板,将Sb2Se3中一半Sb原子替换为Cr原子,促进Sb2Se3向CrSbSe3晶相转化。所制备的CrSbSe3纳米带长度约为5μm,宽度为80 ~ 120 nm,厚度约为5 nm,并在低于71 K的居里温度下表现出软磁行为。
通过对CrSbSe3单根纳米带进行磁电测试,证明其典型的半导体行为和铁磁性,进一步证实了1D CrSbSe3半导体的本征铁磁性。该工作提供了一种新颖的自下而上模板合成三元一维纳米带的方法,为一维铁磁半导体的发展与应用奠定了基础。
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